The influence of p-doping on two-state lasing in InAs/InGaAs quantum dot lasers
Identifieur interne : 000349 ( Main/Repository ); précédent : 000348; suivant : 000350The influence of p-doping on two-state lasing in InAs/InGaAs quantum dot lasers
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Abstract
Two-state lasing in devices based on undoped and p-type modulation-doped InAs/InGaAs quantum dots is studied for various cavity lengths and temperatures. Modulation doping of the active region strongly enhances the threshold current of two-state lasing, preserves ground-state lasing up to higher temperatures and increases ground-state output power. The impact of modulation doping is especially strong in short cavities.
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<term>Ground states</term>
<term>Indium arsenides</term>
<term>Modulation doping</term>
<term>Output power</term>
<term>Quantum dot lasers</term>
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<term>Puissance sortie</term>
<term>Arséniure d'indium</term>
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<front><div type="abstract" xml:lang="en">Two-state lasing in devices based on undoped and p-type modulation-doped InAs/InGaAs quantum dots is studied for various cavity lengths and temperatures. Modulation doping of the active region strongly enhances the threshold current of two-state lasing, preserves ground-state lasing up to higher temperatures and increases ground-state output power. The impact of modulation doping is especially strong in short cavities.</div>
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